The rise of 8-Inch SiC wafers

Recent developments in 8-inch silicon carbide (SiC) technology mark a significant transformation in the semiconductor sector, especially for power electronics. Japan’s NGK Insulators has successfully created 8-inch SiC wafers, which will be showcased at ICSCRM 2024, underscoring the rapid advancements in this field. Additionally, Resonac is nearing the commercialisation of its 8-inch epitaxial wafers, targeting mass production of both epitaxial wafers and substrates by 2025, while Onsemi is set to introduce its 8-inch wafers later this year.

In the U.S., Wolfspeed has introduced a new 2300V SiC power module, leveraging advanced 8-inch wafer technology to enhance renewable energy applications and fast charging solutions. Meanwhile, in China, Sanan Optoelectronics has launched its 8-inch SiC substrate factory, with plans for significant production capacity, further indicating the growing global demand for these materials.

Market analysts anticipate that the transition from 6-inch to 8-inch wafers will lower production costs, enhancing the accessibility of SiC technology. Larger wafer sizes significantly decrease unit chip costs, with projections indicating that the market share for 8-inch SiC products could grow from under 2% today to approximately 15% by 2026. This shift is expected to create new opportunities across multiple industries, including automotive and renewable energy, as prices for SiC substrates continue to decline.

With increasing competition and advancements in production technology, the SiC industry is on the brink of widespread adoption. As prices for 6-inch substrates fall and 8-inch technology becomes more prevalent, the future looks promising for silicon carbide as a key player in the evolution of power electronics.